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? advanced process technology ultra low on-resistance 150c operating temperature fast switching repetitive avalanche allowed up to tjmax some parameters are different from irf5210s/l p-channel lead-free s d g www.irf.com 1 d 2 pak irf5210spbf to-262 IRF5210LPBF s d g d s d g d gds gate drain source
features of this design are a 150c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these fea- tures combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications. absolute maximum ratings parameter units i d @ t c = 25c continuous drain current, v gs @ -10v a i d @ t c = 100c continuous drain current, vgs @ -10v i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy mj i ar avalanche current a e ar repetitive avalanche ener gy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range soldering temperature, for 10 seconds thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.75 c/w r ja junction-to-ambient (pcb mount, steady state) ??? 40 -7.4 max. -38 -24 -140 3.1 170 1.3 20 17 120 -23 300 (1.6mm from case ) -55 to + 150

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>2?0 electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. t y p. max. units v (br)dss drain-to-source breakdown volta g e-100??????v ? v dss / ? t j breakdown volta g e temp. coefficient ??? -0.11 ??? v/c r ds(on) static drain-to-source on-resistance ??? ??? 60 m ? v gs(th) gate threshold volta g e-2.0???-4.0v g fs forward transconductance 9.5 ??? ??? s i dss drain-to-source leaka g e current ??? ??? -50 a ??? ??? -250 i gss gate-to-source forward leaka g e ??? ??? 100 na gate-to-source reverse leaka g e??????-100 q g total gate char g e ??? 150 230 nc q gs gate-to-source char g e ??? 22 33 q gd gate-to-drain ("miller") char g e???81120 t d(on) turn-on dela y time ??? 14 ??? ns t r rise time ??? 63 ??? t d(off) turn-off dela y time ??? 72 ??? t f fall time ??? 55 ??? l d internal drain inductance ??? 4.5 ??? nh between lead, 6mm (0.25in.) l s internal source inductance ??? 7.5 ??? from packa g e and center of die contact c iss input capacitance ??? 2780 ??? pf c oss output capacitance ??? 800 ??? c rss reverse transfer capacitance ??? 430 ??? source-drain ratings and characteristics parameter min. t y p. max. units i s continuous source current ??? ??? -38 (body diode) a i sm pulsed source current ??? ??? -140 ( bod y diode ) v sd diode forward voltage ??? ??? -1.6 v t rr reverse recovery time ??? 170 260 ns q rr reverse recover y char g e ??? 1180 1770 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v ds = v gs , i d = -250a v ds = -100v, v gs = 0v v ds = -80v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = -250a reference to 25c, i d = -1ma v gs = 10v, i d = -38a t j = 25c, i f = -23a, v dd = -25v di/dt = -100a/s t j = 25c, i s = -23a, v gs = 0v showing the integral reverse p-n junction diode. v gs = -10v mosfet symbol v gs = 0v v ds = -25v conditions ? = 1.0mhz, see fig. 5 r g = 2.4 ? i d = -23a v ds = -50v, i d = -23a v dd = -50v i d = -23a v gs = 20v v gs = -20v v ds = -80v v gs = -10v

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! ! " ! 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 60s pulse width tj = 25c -4.5v 0.1 1 10 100 -v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) -4.5v 60s pulse width tj = 150c vgs top -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v bottom -4.5v 2 4 6 8 10 12 14 -v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = -50v 60s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = -38a v gs = -10v

4 www.irf.com #$ %"&' ( !& (%)& %)& % *+)& 1 10 100 -v ds , drain-to-source voltage (v) 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 25 50 75 100 125 150 q g , total gate charge (nc) 0.0 2.0 4.0 6.0 8.0 10.0 12.0 - v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = -80v v ds = -50v v ds = -20v i d = -23a 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -v sd , source-to-drain voltage (v) 0.1 1 10 100 1000 - i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v 1 10 100 1000 -v ds , drain-to-source voltage (v) 1 10 100 1000 - i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) operation in this area limited by r ds (on) tc = 25c tj = 150c single pulse 100sec 1msec 10msec

www.irf.com 5 %+!& %+!& ," #$ -""! . /0 #$ 5 0#5 1 0.1 % 5 5 @a% + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 t c , case temperature (c) 0 5 10 15 20 25 30 35 40 - i d , d r a i n c u r r e n t ( a ) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) ? (sec) 0.128309 0.000069 0.377663 0.001772 0.244513 0.010024 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci= i / ri ci= i / ri

6 www.irf.com ( !& ( !&," #$ '!-& q g q gs q gd v g charge 1) d.u.t. v ds i d i g -3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 2 .," 2 . t p v ( br ) dss i as r g i as 0.01 ? t p d.u.t l v ds v dd driver a 15v -20v 25 50 75 100 125 150 starting t j , junction temperature (c) 0 50 100 150 200 250 300 350 400 450 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top -8.7a -14a bottom -23a

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - 5 ?

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www.irf.com 9 to-262 part marking information to-262 package outline dimensions are shown in millimeters (inches)

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10 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/09
dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge.

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